Hysteresis modeling in graphene field effect transistors

نویسندگان

  • M. Winters
  • N. Rorsman
چکیده

Graphene field effect transistors with an Al2O3 gate dielectric are fabricated on H-intercalated bilayer graphene grown on semi-insulating 4H-SiC by chemical vapour deposition. DC measurements of the gate voltage vg versus the drain current id reveal a severe hysteresis of clockwise orientation. A capacitive model is used to derive the relationship between the applied gate voltage and the Fermi energy. The electron transport equations are then used to calculate the drain current for a given applied gate voltage. The hysteresis in measured data is then modeled via a modified Preisach kernel. VC 2015 AIP Publishing LLC. [http://dx.doi.org/10.1063/1.4913209]

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Hysteresis of electronic transport in graphene transistors.

Graphene field effect transistors commonly comprise graphene flakes lying on SiO(2) surfaces. The gate-voltage dependent conductance shows hysteresis depending on the gate sweeping rate/range. It is shown here that the transistors exhibit two different kinds of hysteresis in their electrical characteristics. Charge transfer causes a positive shift in the gate voltage of the minimum conductance,...

متن کامل

Quantum modeling of light absorption in graphene based photo-transistors

Graphene based optical devices are highly recommended and interested for integrated optical circuits. As a main component of an optical link, a photodetector based on graphene nano-ribbons is proposed and studied. A quantum transport model is presented for simulation of a graphene nano-ribbon (GNR) -based photo-transistor based on non-equilibrium Green’s function method. In the proposed model a...

متن کامل

Design and Optimization of Input-Output Block using Graphene Nano-ribbon Transistors

In the electronics industry, scaling and optimization is final goal. But, according to ITRS predictions, silicon as basic material for semiconductors, is facing physical limitation and approaching the end of the path. Therefore, researchers are looking for the silicon replacement. Until now, carbon and its allotrope, graphene, look to be viable candidates. Among different circuits, IO block is ...

متن کامل

Conduction coefficient modeling in bilayer graphene based on schottky transistors

Nowadays carbon nanoparticles are applied on the island of single electron transistor and Nano-transistors. The basis of single electron devices (SEDs) is controllable single electron transfer between small conducting islands. Based on the important points in quantum mechanics, when a wave passes through several spatial regions with different boundaries, the wave function of the first region di...

متن کامل

Graphene-lead zirconate titanate optothermal field effect transistors

Related Articles Polarization mechanism and quasi-electric-double-layer modeling for indium-tin-oxide electric-double-layer thinfilm-transistors Appl. Phys. Lett. 100, 113506 (2012) High ON/OFF ratio and multimode transport in silicon nanochains field effect transistors Appl. Phys. Lett. 100, 113108 (2012) Integrated on-chip inductors with electroplated magnetic yokes (invited) J. Appl. Phys. 1...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2015